The onsemi NTH4L022N120M3S is a silicon carbide (SiC) MOSFET rated for 1200V operation in a TO247-4L package. It features 22mΩ on-state resistance and is designed for high-efficiency switching applications in industrial power conversion, renewable energy inverters, EV charging infrastructure, and motor drives. The TO247-4L form factor provides robust thermal management and simplified PCB integration for demanding thermal environments. SiC technology delivers lower switching losses and higher junction temperature capability compared to traditional silicon MOSFETs, enabling higher power density and improved system efficiency. Typical applications include three-phase inverters, power factor correction circuits, and DC-DC converters requiring 1200V rated components.
Tested and guaranteed. Available via quote from G5 Network Group.
